Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

Keyphrases

• Base Layer 50%
• C-doped 100%
• Circuit Application 100%
• Collector Structure 50%
• Common Emitter Current Gain 50%
• Current Blocking 50%
• Current Density 50%
• DC Characteristics 50%
• Device Reliability 50%
• Device Stability 50%
• ECR Plasma 50%
• Fmax 50%
• High Breakdown Voltage 50%
• High-speed Circuits 100%
• InGaAs 100%
• InGaAsP 50%
• InP HBT 100%
• InP-based 50%
• On-glass 50%
• P-type Dopant 50%
• Passivation 50%
• Plasma Etching 50%
• Room Temperature 50%
• Spinon 50%
• Wet Chemical Method 50%

Engineering

• Base Layer 50%
• Breakdown Voltage 50%
• Current Gain 50%
• Dopants 50%
• High Speed Circuit 100%
• Indium Gallium Arsenide 100%
• Passivation 50%
• Room Temperature 50%

Material Science

• Density 50%
• Doping (Additives) 50%
• Electronic Circuit 100%
• Indium Gallium Arsenide 100%
• Plasma Etching 50%