Novel lithography-independent pore phase change memory

M. Breitwisch, T. Nirschl, C. F. Chen, Y. Zhu, M. H. Lee, M. Lamorey, G. W. Burr, E. Joseph, A. Schrott, J. B. Philipp, R. Cheek, T. D. Happ, S. H. Chen, S. Zaidi, P. Flaitz, J. Bruley, R. Dasaka, B. Rajendran, S. Rossnagel, M. YangY. C. Chen, R. Bergmann, H. L. Lung, C. Lam

Research output: Contribution to journalConference articlepeer-review

107 Scopus citations

Abstract

We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformai deposition. Fully integrated 256kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less than 250μA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically-defined diameter.

Original languageEnglish (US)
Article number4339743
Pages (from-to)100-101
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 2007
Externally publishedYes
Event2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan
Duration: Jun 12 2007Jun 14 2007

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • Chalcogenide
  • NV memory
  • PCRAM
  • Pore

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