Novel lithography-independent pore phase change memory

M. Breitwisch; T. Nirschl; C. F. Chen; Y. Zhu; M. H. Lee; M. Lamorey; G. W. Burr; E. Joseph; A. Schrott; J. B. Philipp; R. Cheek; T. D. Happ; S. H. Chen; S. Zaidi; P. Flaitz; J. Bruley; R. Dasaka; B. Rajendran; S. Rossnagel; M. Yang; Y. C. Chen; R. Bergmann; H. L. Lung; C. Lam

doi:10.1109/VLSIT.2007.4339743

Novel lithography-independent pore phase change memory

M. Breitwisch, T. Nirschl, C. F. Chen, Y. Zhu, M. H. Lee, M. Lamorey, G. W. Burr, E. Joseph, A. Schrott, J. B. Philipp, R. Cheek, T. D. Happ, S. H. Chen, S. Zaidi, P. Flaitz, J. Bruley, R. Dasaka, B. Rajendran, S. Rossnagel, M. YangY. C. Chen, R. Bergmann, H. L. Lung, C. Lam

Research output: Contribution to journal › Conference article › peer-review

119 Scopus citations

Abstract

We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformai deposition. Fully integrated 256kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less than 250μA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically-defined diameter.

Original language	English (US)
Article number	4339743
Pages (from-to)	100-101
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.2007.4339743
State	Published - 2007
Externally published	Yes
Event	2007 Symposium on VLSI Technology, VLSIT 2007 - Kyoto, Japan Duration: Jun 12 2007 → Jun 14 2007

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

Chalcogenide
NV memory
PCRAM
Pore

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10.1109/VLSIT.2007.4339743

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Breitwisch, M., Nirschl, T., Chen, C. F., Zhu, Y., Lee, M. H., Lamorey, M., Burr, G. W., Joseph, E., Schrott, A., Philipp, J. B., Cheek, R., Happ, T. D., Chen, S. H., Zaidi, S., Flaitz, P., Bruley, J., Dasaka, R., Rajendran, B., Rossnagel, S., ... Lam, C. (2007). Novel lithography-independent pore phase change memory. Digest of Technical Papers - Symposium on VLSI Technology, 100-101. Article 4339743. https://doi.org/10.1109/VLSIT.2007.4339743

@article{dff68cea355a43518a33795e62a58712,

title = "Novel lithography-independent pore phase change memory",

abstract = "We have successfully demonstrated a novel {"}pore{"} phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a {"}keyhole{"} with conformai deposition. Fully integrated 256kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less than 250μA, and accurate sub-lithographic CDs that can be less than 20\% the size of the lithographically-defined diameter.",

keywords = "Chalcogenide, NV memory, PCRAM, Pore",

author = "M. Breitwisch and T. Nirschl and Chen, \{C. F.\} and Y. Zhu and Lee, \{M. H.\} and M. Lamorey and Burr, \{G. W.\} and E. Joseph and A. Schrott and Philipp, \{J. B.\} and R. Cheek and Happ, \{T. D.\} and Chen, \{S. H.\} and S. Zaidi and P. Flaitz and J. Bruley and R. Dasaka and B. Rajendran and S. Rossnagel and M. Yang and Chen, \{Y. C.\} and R. Bergmann and Lung, \{H. L.\} and C. Lam",

year = "2007",

doi = "10.1109/VLSIT.2007.4339743",

language = "English (US)",

pages = "100--101",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 Symposium on VLSI Technology, VLSIT 2007 ; Conference date: 12-06-2007 Through 14-06-2007",

}

Breitwisch, M, Nirschl, T, Chen, CF, Zhu, Y, Lee, MH, Lamorey, M, Burr, GW, Joseph, E, Schrott, A, Philipp, JB, Cheek, R, Happ, TD, Chen, SH, Zaidi, S, Flaitz, P, Bruley, J, Dasaka, R, Rajendran, B, Rossnagel, S, Yang, M, Chen, YC, Bergmann, R, Lung, HL & Lam, C 2007, 'Novel lithography-independent pore phase change memory', Digest of Technical Papers - Symposium on VLSI Technology, pp. 100-101. https://doi.org/10.1109/VLSIT.2007.4339743

TY - JOUR

T1 - Novel lithography-independent pore phase change memory

AU - Breitwisch, M.

AU - Nirschl, T.

AU - Chen, C. F.

AU - Zhu, Y.

AU - Lee, M. H.

AU - Lamorey, M.

AU - Burr, G. W.

AU - Joseph, E.

AU - Schrott, A.

AU - Philipp, J. B.

AU - Cheek, R.

AU - Happ, T. D.

AU - Chen, S. H.

AU - Zaidi, S.

AU - Flaitz, P.

AU - Bruley, J.

AU - Dasaka, R.

AU - Rajendran, B.

AU - Rossnagel, S.

AU - Yang, M.

AU - Chen, Y. C.

AU - Bergmann, R.

AU - Lung, H. L.

AU - Lam, C.

PY - 2007

Y1 - 2007

N2 - We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformai deposition. Fully integrated 256kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less than 250μA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically-defined diameter.

AB - We have successfully demonstrated a novel "pore" phase change memory cell, whose critical dimension (CD) is independent of lithography. Instead, the pore diameter is accurately defined by intentionally creating a "keyhole" with conformai deposition. Fully integrated 256kbit test chips have been fabricated in 180nm CMOS technology. We report SET times of 80ns, RESET currents less than 250μA, and accurate sub-lithographic CDs that can be less than 20% the size of the lithographically-defined diameter.

KW - Chalcogenide

KW - NV memory

KW - PCRAM

KW - Pore

UR - https://www.scopus.com/pages/publications/47249119179

UR - https://www.scopus.com/inward/citedby.url?scp=47249119179&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2007.4339743

DO - 10.1109/VLSIT.2007.4339743

M3 - Conference article

AN - SCOPUS:47249119179

SN - 0743-1562

SP - 100

EP - 101

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 4339743

T2 - 2007 Symposium on VLSI Technology, VLSIT 2007

Y2 - 12 June 2007 through 14 June 2007

ER -

Novel lithography-independent pore phase change memory

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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