Observation of a donor exciton band in silicon

M. Capizzi; G. A. Thomas; F. DeRosa; R. N. Bhatt; T. M. Rice

doi:10.1016/0038-1098(79)90308-9

Observation of a donor exciton band in silicon

M. Capizzi
, G. A. Thomas
, F. DeRosa
, R. N. Bhatt
, T. M. Rice

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

Far-infrared transmission measurements on P-doped Si at donor concentrations below the metal-insulator transition show absorption bands from donor pairs. We identify the lowest energy band as charge transfer excitations from a donor to its neigbhor, forming excitons (D⁺D^-) in the Mott-Hubbard gap. The results suggest that charge transfer states in complexes dominate the low-energy optical excitations as the insulator approaches the Mott density.

Original language	English (US)
Pages (from-to)	611-616
Number of pages	6
Journal	Solid State Communications
Volume	31
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(79)90308-9
State	Published - Sep 1979
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(79)90308-9

Cite this

@article{9ee4f6c710c5489fbb2065cb69fd9903,

title = "Observation of a donor exciton band in silicon",

abstract = "Far-infrared transmission measurements on P-doped Si at donor concentrations below the metal-insulator transition show absorption bands from donor pairs. We identify the lowest energy band as charge transfer excitations from a donor to its neigbhor, forming excitons (D+D-) in the Mott-Hubbard gap. The results suggest that charge transfer states in complexes dominate the low-energy optical excitations as the insulator approaches the Mott density.",

author = "M. Capizzi and Thomas, \{G. A.\} and F. DeRosa and Bhatt, \{R. N.\} and Rice, \{T. M.\}",

year = "1979",

month = sep,

doi = "10.1016/0038-1098(79)90308-9",

language = "English (US)",

volume = "31",

pages = "611--616",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Observation of a donor exciton band in silicon

AU - Capizzi, M.

AU - Thomas, G. A.

AU - DeRosa, F.

AU - Bhatt, R. N.

AU - Rice, T. M.

PY - 1979/9

Y1 - 1979/9

N2 - Far-infrared transmission measurements on P-doped Si at donor concentrations below the metal-insulator transition show absorption bands from donor pairs. We identify the lowest energy band as charge transfer excitations from a donor to its neigbhor, forming excitons (D+D-) in the Mott-Hubbard gap. The results suggest that charge transfer states in complexes dominate the low-energy optical excitations as the insulator approaches the Mott density.

AB - Far-infrared transmission measurements on P-doped Si at donor concentrations below the metal-insulator transition show absorption bands from donor pairs. We identify the lowest energy band as charge transfer excitations from a donor to its neigbhor, forming excitons (D+D-) in the Mott-Hubbard gap. The results suggest that charge transfer states in complexes dominate the low-energy optical excitations as the insulator approaches the Mott density.

UR - https://www.scopus.com/pages/publications/0018517511

UR - https://www.scopus.com/pages/publications/0018517511#tab=citedBy

U2 - 10.1016/0038-1098(79)90308-9

DO - 10.1016/0038-1098(79)90308-9

M3 - Article

AN - SCOPUS:0018517511

SN - 0038-1098

VL - 31

SP - 611

EP - 616

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Observation of a donor exciton band in silicon

Abstract

All Science Journal Classification (ASJC) codes

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