Observation of strain and temperature induced changes in the band structure of thin La0.8MnO3-δ films

T. A. Tyson; Q. Qian; M. A. DeLeon; C. Dubourdieu; L. Fratila; Y. Q. Cai; K. H. Ahn

doi:10.1063/1.2711779

Observation of strain and temperature induced changes in the band structure of thin La_0.8MnO_3-δ films

T. A. Tyson, Q. Qian, M. A. DeLeon, C. Dubourdieu, L. Fratila, Y. Q. Cai, K. H. Ahn

Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Mn K -edge resonant inelastic x-ray scattering measurements were performed on films of La0.8 Mn O3-δ. The measurements reveal that strain causes large shifts of the bands above the Fermi level. The Mn 3d band switches from a narrow upshifted peak at high temperature to a broad bulklike band at low temperature in ultrathin films. The strain induced switching behavior opens the possibility of tuning the transition to higher temperatures for device applications in this class of manganite materials.

Original language	English (US)
Article number	101915
Journal	Applied Physics Letters
Volume	90
Issue number	10
DOIs	https://doi.org/10.1063/1.2711779
State	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2711779

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title = "Observation of strain and temperature induced changes in the band structure of thin La0.8MnO3-δ films",

abstract = "Mn K -edge resonant inelastic x-ray scattering measurements were performed on films of La0.8 Mn O3-δ. The measurements reveal that strain causes large shifts of the bands above the Fermi level. The Mn 3d band switches from a narrow upshifted peak at high temperature to a broad bulklike band at low temperature in ultrathin films. The strain induced switching behavior opens the possibility of tuning the transition to higher temperatures for device applications in this class of manganite materials.",

author = "Tyson, {T. A.} and Q. Qian and DeLeon, {M. A.} and C. Dubourdieu and L. Fratila and Cai, {Y. Q.} and Ahn, {K. H.}",

note = "Funding Information: The authors acknowledge BL12XU, SPring-8, and NSRRC for the use of the synchrotron facilities. The authors are deeply indebted to N. Hiraoka, H. Ishii, and I. Jarrige for outstanding support and guidance in conducting these experiments. This research was funded by NSF DMR-0512196, NSF INT-0233316, and CNRS/NSF Project No. 14550. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1063/1.2711779",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Observation of strain and temperature induced changes in the band structure of thin La0.8MnO3-δ films

AU - Tyson, T. A.

AU - Qian, Q.

AU - DeLeon, M. A.

AU - Dubourdieu, C.

AU - Fratila, L.

AU - Cai, Y. Q.

AU - Ahn, K. H.

N1 - Funding Information: The authors acknowledge BL12XU, SPring-8, and NSRRC for the use of the synchrotron facilities. The authors are deeply indebted to N. Hiraoka, H. Ishii, and I. Jarrige for outstanding support and guidance in conducting these experiments. This research was funded by NSF DMR-0512196, NSF INT-0233316, and CNRS/NSF Project No. 14550. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - Mn K -edge resonant inelastic x-ray scattering measurements were performed on films of La0.8 Mn O3-δ. The measurements reveal that strain causes large shifts of the bands above the Fermi level. The Mn 3d band switches from a narrow upshifted peak at high temperature to a broad bulklike band at low temperature in ultrathin films. The strain induced switching behavior opens the possibility of tuning the transition to higher temperatures for device applications in this class of manganite materials.

AB - Mn K -edge resonant inelastic x-ray scattering measurements were performed on films of La0.8 Mn O3-δ. The measurements reveal that strain causes large shifts of the bands above the Fermi level. The Mn 3d band switches from a narrow upshifted peak at high temperature to a broad bulklike band at low temperature in ultrathin films. The strain induced switching behavior opens the possibility of tuning the transition to higher temperatures for device applications in this class of manganite materials.

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ER -

Observation of strain and temperature induced changes in the band structure of thin La_0.8MnO_3-δ films

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