Observation of strain and temperature induced changes in the band structure of thin La0.8MnO3-δ films

T. A. Tyson, Q. Qian, M. A. DeLeon, C. Dubourdieu, L. Fratila, Y. Q. Cai, K. H. Ahn

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Abstract

Mn K -edge resonant inelastic x-ray scattering measurements were performed on films of La0.8 Mn O3-δ. The measurements reveal that strain causes large shifts of the bands above the Fermi level. The Mn 3d band switches from a narrow upshifted peak at high temperature to a broad bulklike band at low temperature in ultrathin films. The strain induced switching behavior opens the possibility of tuning the transition to higher temperatures for device applications in this class of manganite materials.

Original languageEnglish (US)
Article number101915
JournalApplied Physics Letters
Volume90
Issue number10
DOIs
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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