Abstract
Optical measurements of phosphorus-doped silicon yield a donor susceptibility which can be fitted with a critical form that extrapolates to a polarization catastrophe at the insulator-metal transition. The exponent is about twice classical predictions and demonstrates the quantum nature of the transition.
Original language | English (US) |
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Pages (from-to) | 1019-1022 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 44 |
Issue number | 15 |
DOIs | |
State | Published - 1980 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy