Abstract
Optical measurements of phosphorus-doped silicon yield a donor susceptibility which can be fitted with a critical form that extrapolates to a polarization catastrophe at the insulator-metal transition. The exponent is about twice classical predictions and demonstrates the quantum nature of the transition.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1019-1022 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 44 |
| Issue number | 15 |
| DOIs | |
| State | Published - 1980 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy