On the dynamic resistance and reliability of phase change memory

B. Rajendran, M. H. Lee, M. Breitwisch, G. W. Burr, Y. H. Shih, R. Cheek, A. Schrott, C. F. Chen, M. Lamorey, E. Joseph, Y. Zhu, R. Dasaka, P. L. Flait, F. H. Baumann, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Scopus citations

Abstract

A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (Rd) is inversely related to the programming current (I), as Rd = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.

Original languageEnglish (US)
Title of host publication2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Pages96-97
Number of pages2
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States
Duration: Jun 17 2008Jun 19 2008

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
CountryUnited States
CityHonolulu, HI
Period6/17/086/19/08

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Keywords

  • NV memory and chalcogenide
  • PCRAM

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