On the dynamic resistance and reliability of phase change memory

B. Rajendran; M. H. Lee; M. Breitwisch; G. W. Burr; Y. H. Shih; R. Cheek; A. Schrott; C. F. Chen; M. Lamorey; E. Joseph; Y. Zhu; R. Dasaka; P. L. Flait; F. H. Baumann; H. L. Lung; C. Lam

doi:10.1109/VLSIT.2008.4588576

On the dynamic resistance and reliability of phase change memory

B. Rajendran, M. H. Lee, M. Breitwisch, G. W. Burr, Y. H. Shih, R. Cheek, A. Schrott, C. F. Chen, M. Lamorey, E. Joseph, Y. Zhu, R. Dasaka, P. L. Flait, F. H. Baumann, H. L. Lung, C. Lam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

26 Scopus citations

Abstract

A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (R_d) is inversely related to the programming current (I), as R_d = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.

Original language	English (US)
Title of host publication	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Pages	96-97
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2008.4588576
State	Published - 2008
Externally published	Yes
Event	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT - Honolulu, HI, United States Duration: Jun 17 2008 → Jun 19 2008

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT
Country/Territory	United States
City	Honolulu, HI
Period	6/17/08 → 6/19/08

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Keywords

NV memory and chalcogenide
PCRAM

Access to Document

10.1109/VLSIT.2008.4588576

Cite this

Rajendran, B., Lee, M. H., Breitwisch, M., Burr, G. W., Shih, Y. H., Cheek, R., Schrott, A., Chen, C. F., Lamorey, M., Joseph, E., Zhu, Y., Dasaka, R., Flait, P. L., Baumann, F. H., Lung, H. L., & Lam, C. (2008). On the dynamic resistance and reliability of phase change memory. In 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT (pp. 96-97). Article 4588576 (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2008.4588576

@inproceedings{9b54c587485b452995ee1ac65950f7d9,

title = "On the dynamic resistance and reliability of phase change memory",

abstract = "A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (Rd) is inversely related to the programming current (I), as Rd = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.",

keywords = "NV memory and chalcogenide, PCRAM",

author = "B. Rajendran and Lee, {M. H.} and M. Breitwisch and Burr, {G. W.} and Shih, {Y. H.} and R. Cheek and A. Schrott and Chen, {C. F.} and M. Lamorey and E. Joseph and Y. Zhu and R. Dasaka and Flait, {P. L.} and Baumann, {F. H.} and Lung, {H. L.} and C. Lam",

year = "2008",

doi = "10.1109/VLSIT.2008.4588576",

language = "English (US)",

isbn = "9781424418053",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "96--97",

booktitle = "2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT",

}

Rajendran, B, Lee, MH, Breitwisch, M, Burr, GW, Shih, YH, Cheek, R, Schrott, A, Chen, CF, Lamorey, M, Joseph, E, Zhu, Y, Dasaka, R, Flait, PL, Baumann, FH, Lung, HL & Lam, C 2008, On the dynamic resistance and reliability of phase change memory. in 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT., 4588576, Digest of Technical Papers - Symposium on VLSI Technology, pp. 96-97, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, Honolulu, HI, United States, 6/17/08. https://doi.org/10.1109/VLSIT.2008.4588576

TY - GEN

T1 - On the dynamic resistance and reliability of phase change memory

AU - Rajendran, B.

AU - Lee, M. H.

AU - Breitwisch, M.

AU - Burr, G. W.

AU - Shih, Y. H.

AU - Cheek, R.

AU - Schrott, A.

AU - Chen, C. F.

AU - Lamorey, M.

AU - Joseph, E.

AU - Zhu, Y.

AU - Dasaka, R.

AU - Flait, P. L.

AU - Baumann, F. H.

AU - Lung, H. L.

AU - Lam, C.

PY - 2008

Y1 - 2008

N2 - A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (Rd) is inversely related to the programming current (I), as Rd = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.

AB - A novel characterization metric for phase change memory based on the measured cell resistance during RESET programming is introduced. We show that this 'dynamic resistance' (Rd) is inversely related to the programming current (I), as Rd = [A/I] + B. While the slope parameter A depends only on the intrinsic properties of the phase change material, the intercept B also depends on the effective physical dimensions of the memory element. We demonstrate that these two parameters provide characterization and insight into the degradation mechanisms of memory cells during operation.

KW - NV memory and chalcogenide

KW - PCRAM

UR - http://www.scopus.com/inward/record.url?scp=51949091262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51949091262&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2008.4588576

DO - 10.1109/VLSIT.2008.4588576

M3 - Conference contribution

AN - SCOPUS:51949091262

SN - 9781424418053

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 96

EP - 97

BT - 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT

T2 - 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT

Y2 - 17 June 2008 through 19 June 2008

ER -

On the dynamic resistance and reliability of phase change memory

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this