On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

Shaofei Zhang, Yukun Li, Saeed Fathololoumi, Hieu Pham Trung Nguyen, Qi Wang, Zetian Mi, Qiming Li, George T. Wang

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.

Original languageEnglish (US)
Article number082103
JournalAIP Advances
Volume3
Issue number8
DOIs
StatePublished - Aug 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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