On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

Shaofei Zhang; Yukun Li; Saeed Fathololoumi; Hieu Pham Trung Nguyen; Qi Wang; Zetian Mi; Qiming Li; George T. Wang

doi:10.1063/1.4817834

On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

Shaofei Zhang
, Yukun Li
, Saeed Fathololoumi
, Hieu Pham Trung Nguyen
, Qi Wang
, Zetian Mi
, Qiming Li
, George T. Wang

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.

Original language	English (US)
Article number	082103
Journal	AIP Advances
Volume	3
Issue number	8
DOIs	https://doi.org/10.1063/1.4817834
State	Published - Aug 2013
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.4817834

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@article{9000f730a1fb42ce83ddfe0d0e4778be,

title = "On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping",

abstract = "The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.",

author = "Shaofei Zhang and Yukun Li and Saeed Fathololoumi and Nguyen, \{Hieu Pham Trung\} and Qi Wang and Zetian Mi and Qiming Li and Wang, \{George T.\}",

note = "Funding Information: This work was supported by the Natural Sciences and Engineering Research Council of Canada and the Fonds de recherchsur la nature et les technologies. The nanorod fabrication was performed at Sandia and funded by the Solid-State-Lighting Science Energy Frontier Research Center, funded by the U.S. DOE Office of Basic Energy Sciences. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy National Nuclear Security Administration under contract DE-AC04-94AL85000.",

year = "2013",

month = aug,

doi = "10.1063/1.4817834",

language = "English (US)",

volume = "3",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

AU - Zhang, Shaofei

AU - Li, Yukun

AU - Fathololoumi, Saeed

AU - Nguyen, Hieu Pham Trung

AU - Wang, Qi

AU - Mi, Zetian

AU - Li, Qiming

AU - Wang, George T.

N1 - Funding Information: This work was supported by the Natural Sciences and Engineering Research Council of Canada and the Fonds de recherchsur la nature et les technologies. The nanorod fabrication was performed at Sandia and funded by the Solid-State-Lighting Science Energy Frontier Research Center, funded by the U.S. DOE Office of Basic Energy Sciences. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy National Nuclear Security Administration under contract DE-AC04-94AL85000.

PY - 2013/8

Y1 - 2013/8

N2 - The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.

AB - The optical performance of top-down etched InGaN/GaN nanorod light emitting diodes (LEDs) was studied using temperature variable photoluminescence spectroscopy with a 405 nm pump laser. Efficiency droop is measured from such nanorod structures, which is further enhanced with decreasing temperature. Through detailed rate equation analysis of the temperature-dependent carrier distribution and modeling of the quantum efficiency, this unique phenomenon can be largely explained by the interplay and dynamics between carrier radiative recombination in localized states and nonradiative recombination via surface states/defects.

UR - https://www.scopus.com/pages/publications/84883864593

UR - https://www.scopus.com/pages/publications/84883864593#tab=citedBy

U2 - 10.1063/1.4817834

DO - 10.1063/1.4817834

M3 - Article

AN - SCOPUS:84883864593

SN - 2158-3226

VL - 3

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 082103

ER -

On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping

Abstract

All Science Journal Classification (ASJC) codes

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