On the metal-insulator transition in n-type doped CuGaSe2

J. H. Schön, Ch Kloc, E. Arushanov, G. A. Thomas, E. Bucher

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Transport properties of n-type CuGaSe2 single crystals are investigated in the temperature range from 2 to 350 K. The effective donor concentration is varied between 2×1012 and 4.4×1017 cm-3 by co-doping with Ge and Zn. The charge transport properties are analyzed and interpreted in the framework of an Anderson metal-insulator transition. A critical donor concentration Nc of 1.4×1017 cm-3 is estimated, which is in good agreement with the Mott criterion (Nc1/3≈0.25/aH). However, the second characteristic concentration, above which the Fermi level merges into the conduction band, was not observed experimentally. This is in accordance with an estimate of 7×1017 cm-3 according to the Matsubara-Toyozawa criterion, which exceeds the highest donor concentrations achieved in this material so far. The effective dopant density in n-type CuGaSe2 is limited by self-compensation due to intrinsic defects (mainly Cu vacancies). Furthermore, at low temperatures a crossover from Mott- to Efros-Shklovskii-type variable range hopping is observed on the dielectric side of the transition.

Original languageEnglish (US)
Pages (from-to)4603-4611
Number of pages9
JournalJournal of Physics Condensed Matter
Volume12
Issue number21
DOIs
StatePublished - May 29 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'On the metal-insulator transition in n-type doped CuGaSe<sub>2</sub>'. Together they form a unique fingerprint.

Cite this