Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy

Hakan Altan; Feng Huang; John F. Federici; Aidong Lan; Haim Grebel

doi:10.1063/1.1805720

Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy

Hakan Altan, Feng Huang, John F. Federici, Aidong Lan, Haim Grebel

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We have conducted visible pump-THz (THz - terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed.

Original language	English (US)
Pages (from-to)	6685-6689
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	11
DOIs	https://doi.org/10.1063/1.1805720
State	Published - Dec 1 2004

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1805720

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@article{7df4bd4ac2e34188b0210113705cfbe0,

title = "Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy",

abstract = "We have conducted visible pump-THz (THz - terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed.",

author = "Hakan Altan and Feng Huang and Federici, {John F.} and Aidong Lan and Haim Grebel",

note = "Funding Information: The support of the U.S. Army Research Office (Contract No. DAAD 19-01-1-0009) is gratefully acknowledged.",

year = "2004",

month = dec,

day = "1",

doi = "10.1063/1.1805720",

language = "English (US)",

volume = "96",

pages = "6685--6689",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy

AU - Altan, Hakan

AU - Huang, Feng

AU - Federici, John F.

AU - Lan, Aidong

AU - Grebel, Haim

N1 - Funding Information: The support of the U.S. Army Research Office (Contract No. DAAD 19-01-1-0009) is gratefully acknowledged.

PY - 2004/12/1

Y1 - 2004/12/1

N2 - We have conducted visible pump-THz (THz - terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed.

AB - We have conducted visible pump-THz (THz - terahertz) probe measurements on single wall carbon nanotubes deposited on quartz substrates. Our results suggest that the photoexcited nanotubes exhibit localized transport due to Lorentz-type photoinduced localized states from 0.2 to 0.7 THz. Upon modeling the THz transmission through the photoexcited layer with an effective dielectric constant given by Maxwell-Garnett theory we found that the data are best fit by a broad Lorentz state at 0.5 THz. These experiments were repeated for ion-implanted, 3-4 nm Si nanoclusters in quartz for which a similar behavior was observed.

UR - http://www.scopus.com/inward/record.url?scp=21044448402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21044448402&partnerID=8YFLogxK

U2 - 10.1063/1.1805720

DO - 10.1063/1.1805720

M3 - Article

AN - SCOPUS:21044448402

SN - 0021-8979

VL - 96

SP - 6685

EP - 6689

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Optical and electronic characteristics of single walled carbon nanotubes and silicon nanoclusters by tetrahertz spectroscopy

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