Optical and electronic properties of AlN, GaN and InN: An analysis

Chiranjivi Lamsal, Dongguo Chen, Nuggehalli M. Ravindra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Optical properties of III-V nitrides, AlN, GaN and InN, have been analyzed in the study. The analysis takes into account the available data of the optical properties in the literature. The related optical properties such as the energy dependent dielectric function, and temperature and pressure dependent band gap are analyzed. Penn-like models are deployed to interpret the peaks in the reflectivity spectra and are compared with available data in the literature. Structure-dependent dielectric functions are investigated from both experimental and theoretical perspectives.

Original languageEnglish (US)
Title of host publicationMaterials Processing and Interfaces
PublisherMinerals, Metals and Materials Society
Pages701-713
Number of pages13
ISBN (Print)9781118296073
DOIs
StatePublished - 2012
Event141st Annual Meeting and Exhibition, TMS 2012 - Orlando, FL, United States
Duration: Mar 11 2012Mar 15 2012

Publication series

NameTMS Annual Meeting
Volume1

Other

Other141st Annual Meeting and Exhibition, TMS 2012
CountryUnited States
CityOrlando, FL
Period3/11/123/15/12

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

Keywords

  • AlN
  • GaN and inn
  • Nitride semiconductors
  • Optical properties

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