@inproceedings{497277f05cdb4f35ae1622baa257a51e,
title = "Optical and electronic properties of AlN, GaN and InN: An analysis",
abstract = "Optical properties of III-V nitrides, AlN, GaN and InN, have been analyzed in the study. The analysis takes into account the available data of the optical properties in the literature. The related optical properties such as the energy dependent dielectric function, and temperature and pressure dependent band gap are analyzed. Penn-like models are deployed to interpret the peaks in the reflectivity spectra and are compared with available data in the literature. Structure-dependent dielectric functions are investigated from both experimental and theoretical perspectives.",
keywords = "AlN, GaN and inn, Nitride semiconductors, Optical properties",
author = "Chiranjivi Lamsal and Dongguo Chen and Ravindra, {Nuggehalli M.}",
year = "2012",
doi = "10.1002/9781118356074.ch89",
language = "English (US)",
isbn = "9781118296073",
series = "TMS Annual Meeting",
publisher = "Minerals, Metals and Materials Society",
pages = "701--713",
booktitle = "Materials Processing and Interfaces",
address = "United States",
note = "141st Annual Meeting and Exhibition, TMS 2012 ; Conference date: 11-03-2012 Through 15-03-2012",
}