Optical and microstructural characterization of nanocrystalline silicon superlattices

L. Tsybeskov, G. F. Grom, R. Krishnan, P. M. Fauchet, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, D. J. Lockwood, V. Timoshenko, J. Diener, H. Heckler, D. Kovalev, F. Koch, T. N. Blanton

Research output: Contribution to journalConference articlepeer-review

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Abstract

We present optical and microstructural characterization of nanocrystalline silicon superlattices (nc-Si SLs). Our samples have better than 5% Si nanocrystal size distribution and a long range order along the direction of growth provided by periodically alternating layers of Si nanocrystals and SiO2. Flat and chemically abrupt nc-Si/SiO2 interfaces with a roughness of < 4 angstrom are confirmed by transmission electron microscopy (TEM), Auger elemental microanalysis, X-ray small angle reflection, and low-frequency Raman scattering. Photoluminescence (PL) in our structures has been studied in details including time-resolved and steady-state PL spectroscopy in a wide range of temperature, excitation wavelength and power. Resonantly excited PL spectra show phonon steps proving that the PL originates in Si nanocrystals. Electrical measurements show signature of phonon-assisted tunneling proving low defect density nc-Si/SiO2 interface.

Original languageEnglish (US)
Pages (from-to)173-185
Number of pages13
JournalMaterials Research Society Symposium - Proceedings
Volume588
StatePublished - 2000
Externally publishedYes
EventThe 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' - Boston, MA, USA
Duration: Nov 29 1999Nov 30 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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