Optical and microstructural characterization of nanocrystalline silicon superlattices

L. Tsybeskov; G. F. Grom; R. Krishnan; P. M. Fauchet; J. P. McCaffrey; J. M. Baribeau; G. I. Sproule; D. J. Lockwood; V. Timoshenko; J. Diener; H. Heckler; D. Kovalev; F. Koch; T. N. Blanton

Optical and microstructural characterization of nanocrystalline silicon superlattices

L. Tsybeskov, G. F. Grom, R. Krishnan, P. M. Fauchet, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, D. J. Lockwood, V. Timoshenko, J. Diener, H. Heckler, D. Kovalev, F. Koch, T. N. Blanton

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We present optical and microstructural characterization of nanocrystalline silicon superlattices (nc-Si SLs). Our samples have better than 5% Si nanocrystal size distribution and a long range order along the direction of growth provided by periodically alternating layers of Si nanocrystals and SiO₂. Flat and chemically abrupt nc-Si/SiO₂ interfaces with a roughness of < 4 angstrom are confirmed by transmission electron microscopy (TEM), Auger elemental microanalysis, X-ray small angle reflection, and low-frequency Raman scattering. Photoluminescence (PL) in our structures has been studied in details including time-resolved and steady-state PL spectroscopy in a wide range of temperature, excitation wavelength and power. Resonantly excited PL spectra show phonon steps proving that the PL originates in Si nanocrystals. Electrical measurements show signature of phonon-assisted tunneling proving low defect density nc-Si/SiO₂ interface.

Original language	English (US)
Pages (from-to)	173-185
Number of pages	13
Journal	Materials Research Society Symposium - Proceedings
Volume	588
State	Published - 2000
Externally published	Yes
Event	The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' - Boston, MA, USA Duration: Nov 29 1999 → Nov 30 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Optical and microstructural characterization of nanocrystalline silicon superlattices",

abstract = "We present optical and microstructural characterization of nanocrystalline silicon superlattices (nc-Si SLs). Our samples have better than 5% Si nanocrystal size distribution and a long range order along the direction of growth provided by periodically alternating layers of Si nanocrystals and SiO2. Flat and chemically abrupt nc-Si/SiO2 interfaces with a roughness of < 4 angstrom are confirmed by transmission electron microscopy (TEM), Auger elemental microanalysis, X-ray small angle reflection, and low-frequency Raman scattering. Photoluminescence (PL) in our structures has been studied in details including time-resolved and steady-state PL spectroscopy in a wide range of temperature, excitation wavelength and power. Resonantly excited PL spectra show phonon steps proving that the PL originates in Si nanocrystals. Electrical measurements show signature of phonon-assisted tunneling proving low defect density nc-Si/SiO2 interface.",

author = "L. Tsybeskov and Grom, {G. F.} and R. Krishnan and Fauchet, {P. M.} and McCaffrey, {J. P.} and Baribeau, {J. M.} and Sproule, {G. I.} and Lockwood, {D. J.} and V. Timoshenko and J. Diener and H. Heckler and D. Kovalev and F. Koch and Blanton, {T. N.}",

year = "2000",

language = "English (US)",

volume = "588",

pages = "173--185",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors' ; Conference date: 29-11-1999 Through 30-11-1999",

}

TY - JOUR

T1 - Optical and microstructural characterization of nanocrystalline silicon superlattices

AU - Tsybeskov, L.

AU - Grom, G. F.

AU - Krishnan, R.

AU - Fauchet, P. M.

AU - McCaffrey, J. P.

AU - Baribeau, J. M.

AU - Sproule, G. I.

AU - Lockwood, D. J.

AU - Timoshenko, V.

AU - Diener, J.

AU - Heckler, H.

AU - Kovalev, D.

AU - Koch, F.

AU - Blanton, T. N.

PY - 2000

Y1 - 2000

N2 - We present optical and microstructural characterization of nanocrystalline silicon superlattices (nc-Si SLs). Our samples have better than 5% Si nanocrystal size distribution and a long range order along the direction of growth provided by periodically alternating layers of Si nanocrystals and SiO2. Flat and chemically abrupt nc-Si/SiO2 interfaces with a roughness of < 4 angstrom are confirmed by transmission electron microscopy (TEM), Auger elemental microanalysis, X-ray small angle reflection, and low-frequency Raman scattering. Photoluminescence (PL) in our structures has been studied in details including time-resolved and steady-state PL spectroscopy in a wide range of temperature, excitation wavelength and power. Resonantly excited PL spectra show phonon steps proving that the PL originates in Si nanocrystals. Electrical measurements show signature of phonon-assisted tunneling proving low defect density nc-Si/SiO2 interface.

AB - We present optical and microstructural characterization of nanocrystalline silicon superlattices (nc-Si SLs). Our samples have better than 5% Si nanocrystal size distribution and a long range order along the direction of growth provided by periodically alternating layers of Si nanocrystals and SiO2. Flat and chemically abrupt nc-Si/SiO2 interfaces with a roughness of < 4 angstrom are confirmed by transmission electron microscopy (TEM), Auger elemental microanalysis, X-ray small angle reflection, and low-frequency Raman scattering. Photoluminescence (PL) in our structures has been studied in details including time-resolved and steady-state PL spectroscopy in a wide range of temperature, excitation wavelength and power. Resonantly excited PL spectra show phonon steps proving that the PL originates in Si nanocrystals. Electrical measurements show signature of phonon-assisted tunneling proving low defect density nc-Si/SiO2 interface.

UR - http://www.scopus.com/inward/record.url?scp=0033716487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033716487&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033716487

SN - 0272-9172

VL - 588

SP - 173

EP - 185

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Fall Meeting - Symposium P 'Optical Microstructural Characterization of Semiconductors'

Y2 - 29 November 1999 through 30 November 1999

ER -

Optical and microstructural characterization of nanocrystalline silicon superlattices

Abstract

All Science Journal Classification (ASJC) codes

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