TY - JOUR
T1 - Optical and structural characterization of nanocrystalline silicon superlattices
T2 - Toward nanoscale silicon metrology
AU - Zollner, Stefan
AU - Konkar, Atul
AU - Liu, Ran
AU - Yapa, Himansu
AU - Dryer, Patricia F.
AU - Neeley, Victoria A.
AU - Xie, Qianghua
AU - Grom, Galina F.
AU - Zhu, Qingyuan
AU - Krishnan, Rishikesh
AU - Fauchet, Philippe M.
AU - Tsybeskov, Leonid V.
PY - 2001
Y1 - 2001
N2 - Short-period superlattices consisting of nanocrystalline Si wells and amorphous SiO2 barriers were analyzed using various structural (transmission electron microscopy, atomic force microscopy, and x-ray diffraction) and optical (Raman scattering and spectroscopic ellipsometry) characterization techniques. We observe parallel layers containing polycrystalline Si wells, primarily with <111> orientation, and an interesting surface morphology due to sputtering damage. Raman spectra show a redshift and broadening due to finite-size effects. The ellipsometry data can be described using the effective medium approximation (since the superlattice period is much shorter than the wavelength of the optical excitation) or a superlattice approach based on the Fresnel equations with a polycrystalline Si dielectric function.
AB - Short-period superlattices consisting of nanocrystalline Si wells and amorphous SiO2 barriers were analyzed using various structural (transmission electron microscopy, atomic force microscopy, and x-ray diffraction) and optical (Raman scattering and spectroscopic ellipsometry) characterization techniques. We observe parallel layers containing polycrystalline Si wells, primarily with <111> orientation, and an interesting surface morphology due to sputtering damage. Raman spectra show a redshift and broadening due to finite-size effects. The ellipsometry data can be described using the effective medium approximation (since the superlattice period is much shorter than the wavelength of the optical excitation) or a superlattice approach based on the Fresnel equations with a polycrystalline Si dielectric function.
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M3 - Article
AN - SCOPUS:0035557492
SN - 0272-9172
VL - 638
SP - F511-F516
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
ER -