Optical and structural characterization of nanocrystalline silicon superlattices: Toward nanoscale silicon metrology

Stefan Zollner, Atul Konkar, Ran Liu, Himansu Yapa, Patricia F. Dryer, Victoria A. Neeley, Qianghua Xie, Galina F. Grom, Qingyuan Zhu, Rishikesh Krishnan, Philippe M. Fauchet, Leonid V. Tsybeskov

Research output: Contribution to journalArticlepeer-review

Abstract

Short-period superlattices consisting of nanocrystalline Si wells and amorphous SiO2 barriers were analyzed using various structural (transmission electron microscopy, atomic force microscopy, and x-ray diffraction) and optical (Raman scattering and spectroscopic ellipsometry) characterization techniques. We observe parallel layers containing polycrystalline Si wells, primarily with <111> orientation, and an interesting surface morphology due to sputtering damage. Raman spectra show a redshift and broadening due to finite-size effects. The ellipsometry data can be described using the effective medium approximation (since the superlattice period is much shorter than the wavelength of the optical excitation) or a superlattice approach based on the Fresnel equations with a polycrystalline Si dielectric function.

Original languageEnglish (US)
Pages (from-to)F511-F516
JournalMaterials Research Society Symposium - Proceedings
Volume638
StatePublished - 2001
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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