Optical and structural characterization of nc-Si/a-SiO2 superlattices

G. Grom, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, M. Zacharias, T. N. Blanton, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, H. J. Labbe, D. J. Lockwood

Research output: Contribution to journalConference articlepeer-review

Abstract

Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

Original languageEnglish (US)
Pages (from-to)671-676
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3491
StatePublished - Dec 1 1998
Externally publishedYes
EventProceedings of the 1998 International Conference on Applications of Photonic Technology, ICAPT - Ottawa, Can
Duration: Jul 29 1998Jul 31 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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