Optical and structural characterization of nc-Si/a-SiO2 superlattices

G. Grom; L. Tsybeskov; K. D. Hirschman; P. M. Fauchet; M. Zacharias; T. N. Blanton; J. P. McCaffrey; J. M. Baribeau; G. I. Sproule; H. J. Labbe; D. J. Lockwood

doi:10.1117/12.328605

Optical and structural characterization of nc-Si/a-SiO₂ superlattices

G. Grom, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, M. Zacharias, T. N. Blanton, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, H. J. Labbe, D. J. Lockwood

Research output: Contribution to journal › Conference article › peer-review

Abstract

Nanocrystalline (nc)-Si/amorphous (a)-SiO₂ superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO₂ SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO₂ interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

Original language	English (US)
Pages (from-to)	671-676
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3491
DOIs	https://doi.org/10.1117/12.328605
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 International Conference on Applications of Photonic Technology, ICAPT - Ottawa, Can Duration: Jul 29 1998 → Jul 31 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.328605

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Grom, G., Tsybeskov, L., Hirschman, K. D., Fauchet, P. M., Zacharias, M., Blanton, T. N., McCaffrey, J. P., Baribeau, J. M., Sproule, G. I., Labbe, H. J., & Lockwood, D. J. (1998). Optical and structural characterization of nc-Si/a-SiO₂ superlattices. Proceedings of SPIE - The International Society for Optical Engineering, 3491, 671-676. https://doi.org/10.1117/12.328605

@article{b38c9d37d6d64fcfaa8fd11af8e8ad7c,

title = "Optical and structural characterization of nc-Si/a-SiO2 superlattices",

abstract = "Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.",

author = "G. Grom and L. Tsybeskov and Hirschman, {K. D.} and Fauchet, {P. M.} and M. Zacharias and Blanton, {T. N.} and McCaffrey, {J. P.} and Baribeau, {J. M.} and Sproule, {G. I.} and Labbe, {H. J.} and Lockwood, {D. J.}",

year = "1998",

doi = "10.1117/12.328605",

language = "English (US)",

volume = "3491",

pages = "671--676",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1998 International Conference on Applications of Photonic Technology, ICAPT ; Conference date: 29-07-1998 Through 31-07-1998",

}

TY - JOUR

T1 - Optical and structural characterization of nc-Si/a-SiO2 superlattices

AU - Grom, G.

AU - Tsybeskov, L.

AU - Hirschman, K. D.

AU - Fauchet, P. M.

AU - Zacharias, M.

AU - Blanton, T. N.

AU - McCaffrey, J. P.

AU - Baribeau, J. M.

AU - Sproule, G. I.

AU - Labbe, H. J.

AU - Lockwood, D. J.

PY - 1998

Y1 - 1998

N2 - Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

AB - Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032300326&partnerID=8YFLogxK

U2 - 10.1117/12.328605

DO - 10.1117/12.328605

M3 - Conference article

AN - SCOPUS:0032300326

SN - 0277-786X

VL - 3491

SP - 671

EP - 676

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 International Conference on Applications of Photonic Technology, ICAPT

Y2 - 29 July 1998 through 31 July 1998

ER -

Optical and structural characterization of nc-Si/a-SiO₂ superlattices

Abstract

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