Optical and structural characterization of nc-Si/a-SiO2 superlattices

G. Grom; L. Tsybeskov; K. D. Hirschman; P. M. Fauchet; M. Zacharias; T. N. Blanton; J. P. McCaffrey; J. M. Baribeau; G. I. Sproule; H. J. Labbe; D. J. Lockwood

doi:10.1117/12.328605

Optical and structural characterization of nc-Si/a-SiO₂ superlattices

G. Grom
, L. Tsybeskov
, K. D. Hirschman
, P. M. Fauchet
, M. Zacharias
, T. N. Blanton
, J. P. McCaffrey
, J. M. Baribeau
, G. I. Sproule
, H. J. Labbe
, D. J. Lockwood

Research output: Contribution to journal › Conference article › peer-review

Abstract

Nanocrystalline (nc)-Si/amorphous (a)-SiO₂ superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO₂ SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO₂ interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

Original language	English (US)
Pages (from-to)	671-676
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3491
DOIs	https://doi.org/10.1117/12.328605
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 International Conference on Applications of Photonic Technology, ICAPT - Ottawa, Can Duration: Jul 29 1998 → Jul 31 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.328605

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Grom, G., Tsybeskov, L., Hirschman, K. D., Fauchet, P. M., Zacharias, M., Blanton, T. N., McCaffrey, J. P., Baribeau, J. M., Sproule, G. I., Labbe, H. J., & Lockwood, D. J. (1998). Optical and structural characterization of nc-Si/a-SiO₂ superlattices. Proceedings of SPIE - The International Society for Optical Engineering, 3491, 671-676. https://doi.org/10.1117/12.328605

@article{b38c9d37d6d64fcfaa8fd11af8e8ad7c,

title = "Optical and structural characterization of nc-Si/a-SiO2 superlattices",

abstract = "Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.",

author = "G. Grom and L. Tsybeskov and Hirschman, \{K. D.\} and Fauchet, \{P. M.\} and M. Zacharias and Blanton, \{T. N.\} and McCaffrey, \{J. P.\} and Baribeau, \{J. M.\} and Sproule, \{G. I.\} and Labbe, \{H. J.\} and Lockwood, \{D. J.\}",

year = "1998",

doi = "10.1117/12.328605",

language = "English (US)",

volume = "3491",

pages = "671--676",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1998 International Conference on Applications of Photonic Technology, ICAPT ; Conference date: 29-07-1998 Through 31-07-1998",

}

TY - JOUR

T1 - Optical and structural characterization of nc-Si/a-SiO2 superlattices

AU - Grom, G.

AU - Tsybeskov, L.

AU - Hirschman, K. D.

AU - Fauchet, P. M.

AU - Zacharias, M.

AU - Blanton, T. N.

AU - McCaffrey, J. P.

AU - Baribeau, J. M.

AU - Sproule, G. I.

AU - Labbe, H. J.

AU - Lockwood, D. J.

PY - 1998

Y1 - 1998

N2 - Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

AB - Nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs) have been studied by transmission electron microscopy (TEM), Auger elemental microanalysis (TEM), Raman spectroscopy and optical reflection spectroscopy. Recrystallized Si/SiO2 SL is extremely stable under high temperature annealing (up to 1100 °C) and aggressive wet thermal oxidation: AEM and Raman spectroscopy of folded acoustic phonons (FAP) show no changes in periodicity in the growth direction and the abruptness of the nc-Si/a-SiO2 interfaces. Furthermore, Raman spectroscopy in the optical phonon range indicates that the annealing decreases the defect density in the Si nanocrystals (NCs), possibly due to Si-Si bond rearrangement accompanied by surface reconstruction and surface defect passivation by oxygen.

UR - https://www.scopus.com/pages/publications/0032300326

UR - https://www.scopus.com/pages/publications/0032300326#tab=citedBy

U2 - 10.1117/12.328605

DO - 10.1117/12.328605

M3 - Conference article

AN - SCOPUS:0032300326

SN - 0277-786X

VL - 3491

SP - 671

EP - 676

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 International Conference on Applications of Photonic Technology, ICAPT

Y2 - 29 July 1998 through 31 July 1998

ER -

Optical and structural characterization of nc-Si/a-SiO₂ superlattices

Abstract

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