Optical characterization of light-emitting porous silicon

P. M. Fauchet, L. Tsybeskov, Ju V. Vandyshev, A. Dubois, C. Peng

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

We report the results of an extensive optical characterization of the properties of light-emittingporous silicon (LEPSi), using optical techniques such as Raman spectroscopy, FTIR, cwphotoluminescence (PL) and time-resolved PL spectroscopy. Additional insight is obtained from severalnon-optical techniques, such as optical and electron microscopy, atomic force microscopy, and varioussurface physics tools. We examine how to control the surface passivation of LEPSi and what theconsequences for light emission are. Samples with widely different surface chemistry have been preparedby controlling the electrochemical processes during anodization or by selected post-anodization treatmentssuch as low and high temperature oxidation. In particular, we discuss the relationship between thepresence of Si-H, Si-O-H and Si-O bonds, and the relative strengths of the red PL line having a jisecdecay time and the blue PL having a nsec decay time. These results are compared to the predictions of theleading models that have been proposed to explain the efficient room-temperature luminescence of poroussilicon.

Original languageEnglish (US)
Pages (from-to)155-165
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2141
DOIs
StatePublished - May 26 1994
Externally publishedYes
EventSpectroscopic Characterization Techniques for Semiconductor Technology V 1994 - Los Angeles, United States
Duration: Jan 23 1994Jan 29 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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