Optical Constants of Silicon by Unpolarized Incident Radiation

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4 Scopus citations

Abstract

It is shown that the reflectance of modulated unpolarized incident radiation at the pseudo-polarizing angle can be used to accurately determine the optical constants of absorbing media in the visible region. The approximation that the principal angle of incidence occurs at the pseudo-polarizing angle is assumed to contribute negligible error. Expressions for the refractive index, n, and the extinction coefficient, K, are given in terms of the pseudo-polarizing angle and the reflectance ratio of the parallel (to the plane of incidence) reflected wave vector intensity to the normal reflected wave vector intensity. The experimental values for n and K are determined at wavelengths in the visible spectrum between 4250 and 5750Å, for boron-doped p-type highly polished silicon of 0.01 and 95 Ω-cm resistivity. These values correspond to impurity concentrations of about 10-3-10-6%, respectively. The 0.01 Ω-cm K curve indicates the possibility that direct optical transitions between acceptor levels and the conduction band can be resolved and that this occurs at about 5250Å (≃2.4eV).

Original languageEnglish (US)
Pages (from-to)953-956
Number of pages4
JournalJournal of the Electrochemical Society
Volume127
Issue number4
DOIs
StatePublished - Jan 1 1980

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Keywords

  • doping
  • extinction coefficient
  • reflectance
  • refractive index
  • visible

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