Optical fingerprints of Y2 ordering in III-V ternary semiconductor alloys

Dongguo Chen; N. M. Ravindra

doi:10.1088/0268-1242/28/6/065012

Optical fingerprints of Y2 ordering in III-V ternary semiconductor alloys

Dongguo Chen, N. M. Ravindra

Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin-orbit splitting and band gap for Al_xGa _1-xAs, Ga_xIn_1-xAs, Ga_xIn _1-xP, GaAs_xSb_1-x and InP_xSb _1-x using first-principles calculations. These values and the valence band splittings E₁₂, E₁₃ for these materials are provided as a function of the ordering parameter e. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data.

Original language	English (US)
Article number	065012
Journal	Semiconductor Science and Technology
Volume	28
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/28/6/065012
State	Published - Jun 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/28/6/065012

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abstract = "In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin-orbit splitting and band gap for AlxGa 1-xAs, GaxIn1-xAs, GaxIn 1-xP, GaAsxSb1-x and InPxSb 1-x using first-principles calculations. These values and the valence band splittings E12, E13 for these materials are provided as a function of the ordering parameter e. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data.",

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AB - In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin-orbit splitting and band gap for AlxGa 1-xAs, GaxIn1-xAs, GaxIn 1-xP, GaAsxSb1-x and InPxSb 1-x using first-principles calculations. These values and the valence band splittings E12, E13 for these materials are provided as a function of the ordering parameter e. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data.

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Optical fingerprints of Y2 ordering in III-V ternary semiconductor alloys

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