Optical fingerprints of Y2 ordering in III-V ternary semiconductor alloys

Dongguo Chen, N. M. Ravindra

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin-orbit splitting and band gap for AlxGa 1-xAs, GaxIn1-xAs, GaxIn 1-xP, GaAsxSb1-x and InPxSb 1-x using first-principles calculations. These values and the valence band splittings E12, E13 for these materials are provided as a function of the ordering parameter e. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data.

Original languageEnglish (US)
Article number065012
JournalSemiconductor Science and Technology
Volume28
Issue number6
DOIs
StatePublished - Jun 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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