Optical hall effect in hexagonal InN

T. Hofmann; V. Darakchieva; B. Monemar; H. Lu; W. J. Schaff; M. Schubert

doi:10.1007/s11664-008-0385-8

Optical hall effect in hexagonal InN

T. Hofmann
, V. Darakchieva
, B. Monemar
, H. Lu
, W. J. Schaff
, M. Schubert

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the -point effective mass.

Original language	English (US)
Pages (from-to)	611-615
Number of pages	5
Journal	Journal of Electronic Materials
Volume	37
Issue number	5
DOIs	https://doi.org/10.1007/s11664-008-0385-8
State	Published - May 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Electron effective mass
Electronic properties
Infrared and THz magneto-optic ellipsometry
InN

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10.1007/s11664-008-0385-8

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title = "Optical hall effect in hexagonal InN",

abstract = "Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the -point effective mass.",

keywords = "Electron effective mass, Electronic properties, Infrared and THz magneto-optic ellipsometry, InN",

author = "T. Hofmann and V. Darakchieva and B. Monemar and H. Lu and Schaff, \{W. J.\} and M. Schubert",

year = "2008",

month = may,

doi = "10.1007/s11664-008-0385-8",

language = "English (US)",

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pages = "611--615",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Optical hall effect in hexagonal InN

AU - Hofmann, T.

AU - Darakchieva, V.

AU - Monemar, B.

AU - Lu, H.

AU - Schaff, W. J.

AU - Schubert, M.

PY - 2008/5

Y1 - 2008/5

N2 - Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the -point effective mass.

AB - Measurements of the optical Hall effect in naturally doped high-quality wurtzite-structure InN thin films by generalized ellipsometry reveal that both the surface and the interior (bulk) free electron densities decrease with power-law dependencies on the film thickness. We discover a significant deviation between the bulk electron and dislocation densities. This difference is attributed here to the existence of surface defects with activation mechanism different from bulk dislocations and identifies the possible origin of the so far persistent natural n-type conductivity in InN. We further quantify the anisotropy of the -point effective mass.

KW - Electron effective mass

KW - Electronic properties

KW - Infrared and THz magneto-optic ellipsometry

KW - InN

UR - https://www.scopus.com/pages/publications/42249094531

UR - https://www.scopus.com/pages/publications/42249094531#tab=citedBy

U2 - 10.1007/s11664-008-0385-8

DO - 10.1007/s11664-008-0385-8

M3 - Article

AN - SCOPUS:42249094531

SN - 0361-5235

VL - 37

SP - 611

EP - 615

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Optical hall effect in hexagonal InN

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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