The insulator to metal transition in doped semiconductors appears to be best des-cribed in terms of an Anderson-type model in which randomness plays a central role. A quantitative analysis of the optical properties of an example of such systems is presented illustrating the importance of random fluctuations and electron-hole interactions at the transition.
|Number of pages
|Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
|Published - Dec 1980
All Science Journal Classification (ASJC) codes
- General Chemical Engineering
- General Physics and Astronomy