Optical measurements of the approach to the anderson transition

G. A. Thomas, M. Capizzif, F. Derosa

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The insulator to metal transition in doped semiconductors appears to be best des-cribed in terms of an Anderson-type model in which randomness plays a central role. A quantitative analysis of the optical properties of an example of such systems is presented illustrating the importance of random fluctuations and electron-hole interactions at the transition.

Original languageEnglish (US)
Pages (from-to)913-931
Number of pages19
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume42
Issue number6
DOIs
StatePublished - Dec 1980
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

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