The insulator to metal transition in doped semiconductors appears to be best des-cribed in terms of an Anderson-type model in which randomness plays a central role. A quantitative analysis of the optical properties of an example of such systems is presented illustrating the importance of random fluctuations and electron-hole interactions at the transition.
|Original language||English (US)|
|Number of pages||19|
|Journal||Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties|
|State||Published - Dec 1980|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Physics and Astronomy(all)