Abstract
The insulator to metal transition in doped semiconductors appears to be best des-cribed in terms of an Anderson-type model in which randomness plays a central role. A quantitative analysis of the optical properties of an example of such systems is presented illustrating the importance of random fluctuations and electron-hole interactions at the transition.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 913-931 |
| Number of pages | 19 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties |
| Volume | 42 |
| Issue number | 6 |
| DOIs | |
| State | Published - Dec 1980 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemical Engineering
- General Physics and Astronomy