Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy

J. Titus, H. P.T. Nguyen, Z. Mi, A. G.U. Perera

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors.

Original languageEnglish (US)
Article number121901
JournalApplied Physics Letters
Volume102
Issue number12
DOIs
StatePublished - Mar 25 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this