Abstract
We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low-defect density Ge NW - Si substrate interfaces. Both, PL and RS data indicate that Si - Ge intermixing and strain are more pronounced for the Ge NW - (111) Si interface, while NWs grown on (100) Si substrates are relaxed.
Original language | English (US) |
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Pages (from-to) | 2753-2758 |
Number of pages | 6 |
Journal | Physica Status Solidi (A) Applications and Materials Science |
Volume | 202 |
Issue number | 14 |
DOIs | |
State | Published - Nov 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry