Optical properties of Ge nanowires grown on Si(100) and (111) substrates: Nanowire-substrate heterointerfaces

B. V. Kamenev, V. Sharma, L. Tsybeskov, T. I. Kamins

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low-defect density Ge NW - Si substrate interfaces. Both, PL and RS data indicate that Si - Ge intermixing and strain are more pronounced for the Ge NW - (111) Si interface, while NWs grown on (100) Si substrates are relaxed.

Original languageEnglish (US)
Pages (from-to)2753-2758
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number14
DOIs
StatePublished - Nov 1 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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