Optical properties of Ge nanowires grown on silicon (100) and (111) substrates

B. V. Kamenev, V. Sharma, L. Tsybeskov, T. I. Kamins

Research output: Contribution to conferencePaperpeer-review

Abstract

We report Raman scattering and photoluminescence (PL) measurements of Ge nanowires (NWs) grown by chemical vapor deposition on silicon substrates with (100) and (111) crystallographic orientations. A sharp and narrow Raman peak at ∼ 300 cm -1 indicates single-crystal quality of Ge NWs ∼40 nm in diameter and approximately a micrometer in length. The absence of Si-Ge vibrations in Raman spectra shows that SiGe interdiffusion is insignificant for most of the NW volume. Low temperature PL spectra and the PL intensity-temperature dependence strongly indicate that the observed emission originates mostly at Ge NW Si substrate interfaces, where Si-Ge intermixing has been detected. We found that such interfaces are formed differently for (111) and (100) oriented Si substrates due to the strongly oriented <111> preferential growth direction of Ge NWs.

Original languageEnglish (US)
Pages49-56
Number of pages8
StatePublished - Dec 13 2005
EventNanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States
Duration: Oct 3 2004Oct 8 2004

Other

OtherNanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium
CountryUnited States
CityHonolulu, HI
Period10/3/0410/8/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Optical properties of Ge nanowires grown on silicon (100) and (111) substrates'. Together they form a unique fingerprint.

Cite this