Optical properties of Ge nanowires grown on silicon (100) and (111) substrates

V. Sharma, B. V. Kamenev, L. Tsybeskov, T. I. Kamins

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In this paper, we report Raman Scattering (RS) and photoluminescence (PL) measurements of Ge nanowires (NWs) grown via vapor-liquid-solid (VLS) using chemical vapor deposition silicon substrates consisting of (100) and (111) crystallographic orientations. Ge NWs grown are ∼40 nm in diameter, approximately a micrometer in length, and a sharp narrow Raman peak at ∼300 cm -1 indicates single crystal quality. An absence of SiGe peak in the Raman spectra indicates that SiGe interdiffusion is insignificant for the NW volume. Low temperature PL-intensity-dependence spectra indicate that the observed emission originates at the Ge NW - Si substrate interface, where SiGe intermixing has been detected. This interface is formed differently for (111) and (100) oriented Si substrates due to the 〈111〉 preferential growth direction of Ge NWs.

Original languageEnglish (US)
Article numberF7.20
Pages (from-to)329-334
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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