Optical properties of hydrogenated amorphous silicon

F. Demichelis, E. Minetti-Mezzetti, A. Tagliaferro, E. Tresso, P. Rava, N. M. Ravindra

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28 Scopus citations

Abstract

A detailed study of the optical properties of sputtered hydrogenated amorphous silicon films with varying hydrogen concentration is presented here. The energy dependence of the absorption coefficient is looked into, in detail, from a point of view of understanding the well known Tauc rule and the alternate relations being proposed in recent years. Spectroscopic and band-structural models like Wemple-Didomenico and Penn are then utilized to analyze the optical parameters near the band-gap region of the wavelength spectra. Extensive comparisons of our results are made with those of sputtered a-Si:H films of other workers, glow discharge prepared a-Si:H, chemically vapor deposited and evaporated a-Si, and also crystalline silicon. The similarities in the variation of the optical properties of a-Si:H with increasing hydrogen concentration (or decreasing measurement temperature) to that of crystalline silicon with decreasing measurement temperature lead us to interesting conclusions. Thus, it seems that decreasing disorder (topological or thermal) in a-Si:H is equivalent to decreasing thermal disorder in c-Si, at least as far as the disorder-optical property relationships are concerned.

Original languageEnglish (US)
Pages (from-to)611-618
Number of pages8
JournalJournal of Applied Physics
Volume59
Issue number2
DOIs
StatePublished - 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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