An analysis of recently reported experimental studies(1) of the optical properties of laser-induced heavily doped Si layers is presented here. The analysis has been made on the basis of models like those of Penn(2) and Breckenridge et al.(3) Our calculations show that, in general, Neff, the effective number of electrons contributing to optically induced electronic transitions, increases as does ε2(E), the imaginary part of the complex dielectric constant. This reflects an increased absorption coefficient for these As-doped samples. These studies have been carried out on samples of Si heavily doped by ion-implantation followed by a laser-annealing process. The conclusions based on these studies are seen to be in accord with those of Aspnes et al.(4) and Vina and Cardona.(5).
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