Optical properties of multiple, delta-doped Si:B/Si layers

Han Yun Chang, Eun Kyu Lee, Boris V. Kamenev, Jean Marc Baribeau, David J. Lockwood, Leonid Tsybeskov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Reliable fabrication of high-speed, delta-doped transistors and a better understanding of two-dimensional metal-insulator transitions can be achieved using silicon molecular beam epitaxy (MBE). However, this fabrication technique should be performed with care, avoiding dopant segregation on epitaxial Si surfaces and improving the doping efficiency. Here we report comprehensive structural and optical investigations of MBE-grown Si/delta-doped Si:B multilayer structures. Measurements of Auger electron spectroscopy, Raman scattering, optical reflection and photoluminescence are performed. Our results indicate nearly metallic conductivity at room temperature with a metal-insulator phase transition near T ∼100 K. In contrast to recently reported data, no enhancement of the photoluminescence at room temperature is found. Occasionally, a few samples in specific areas exhibit strong photoluminescence at 1.4-1.6 μm attributable to structural defects, most likely due to B segregation.

Original languageEnglish (US)
Title of host publicationGroup IV Semiconductor Nanostructures-2006
Number of pages6
StatePublished - 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 27 2006Dec 1 2006

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2006 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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