Optical properties of silicon related insulators

N. M. Ravindra, J. Narayan

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We report a study of the optical properties of silicon related insulators. Essentially, the following materials have been considered in this study; noncrystalline Si3N4, SiO2, SiO, and crystalline SiO2. Utilizing the available data of the refractive index and the extinction coefficient in the literature, the related optical properties such as (i) the real (ε1) and imaginary (ε2) parts of the complex-dielectric constant, (ii) absorption coefficient (α), and (iii) electronic polarizability (αe) are calculated. The optical gaps EG of these materials have been estimated employing the Tauc rule and the Cody alternative. Extrapolation of the band-structural and spectroscopic models of Penn [Phys. Rev. 128, 2093 (1962)] and Wemple and Didomenico [Phys. Rev. B 3, 1338 (1971)] are then made to evaluate some band-structural parameters of these materials. Interpretations of the energy corresponding to the peak in ε2 are then sought in terms of the Penn gap Ep. Whenever relevant, comparisons and correlations of the optical properties are also made with some dielectric properties.

Original languageEnglish (US)
Pages (from-to)2017-2021
Number of pages5
JournalJournal of Applied Physics
Issue number5
StatePublished - 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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