Optical properties of Stranski-Krastanov grown three-dimensional Si/Si 1-xGex nanostructures

B. V. Kamenev; J. M. Baribeau; D. J. Lockwood; L. Tsybeskov

doi:10.1016/j.physe.2004.08.047

Optical properties of Stranski-Krastanov grown three-dimensional Si/Si _1-xGe_x nanostructures

B. V. Kamenev, J. M. Baribeau, D. J. Lockwood, L. Tsybeskov

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si_1-xGe_x nanostructures grown by molecular beam epitaxy under near Stranski-Krastanov (S-K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge-Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x>0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.

Original language	English (US)
Pages (from-to)	174-179
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	26
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physe.2004.08.047
State	Published - Feb 2005
Event	International Conference on Quantum Dots - Banff, Alberta, Canada Duration: May 10 2004 → May 13 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Keywords

Dots
Nanocrystals
Photoluminescence
Raman scattering
SiGe

Access to Document

10.1016/j.physe.2004.08.047

Cite this

@article{fb4b14892b064fbdb85e788f75895619,

title = "Optical properties of Stranski-Krastanov grown three-dimensional Si/Si 1-xGex nanostructures",

abstract = "Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si1-xGex nanostructures grown by molecular beam epitaxy under near Stranski-Krastanov (S-K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge-Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x>0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.",

keywords = "Dots, Nanocrystals, Photoluminescence, Raman scattering, SiGe",

author = "Kamenev, {B. V.} and Baribeau, {J. M.} and Lockwood, {D. J.} and L. Tsybeskov",

note = "Funding Information: We thank J.-P. No{\"e}l for the growth of some of the samples used in this study. This work was supported by NSF, SRC and Foundation at NJIT.; International Conference on Quantum Dots ; Conference date: 10-05-2004 Through 13-05-2004",

year = "2005",

month = feb,

doi = "10.1016/j.physe.2004.08.047",

language = "English (US)",

volume = "26",

pages = "174--179",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Optical properties of Stranski-Krastanov grown three-dimensional Si/Si 1-xGex nanostructures

AU - Kamenev, B. V.

AU - Baribeau, J. M.

AU - Lockwood, D. J.

AU - Tsybeskov, L.

N1 - Funding Information: We thank J.-P. Noël for the growth of some of the samples used in this study. This work was supported by NSF, SRC and Foundation at NJIT.

PY - 2005/2

Y1 - 2005/2

N2 - Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si1-xGex nanostructures grown by molecular beam epitaxy under near Stranski-Krastanov (S-K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge-Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x>0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.

AB - Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si1-xGex nanostructures grown by molecular beam epitaxy under near Stranski-Krastanov (S-K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge-Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x>0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.

KW - Dots

KW - Nanocrystals

KW - Photoluminescence

KW - Raman scattering

KW - SiGe

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DO - 10.1016/j.physe.2004.08.047

M3 - Conference article

AN - SCOPUS:13544263324

SN - 1386-9477

VL - 26

SP - 174

EP - 179

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

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