Optical properties of Stranski-Krastanov grown three-dimensional Si/Si 1-xGex nanostructures

B. V. Kamenev, J. M. Baribeau, D. J. Lockwood, L. Tsybeskov

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17 Scopus citations


Detailed Raman and photoluminescence (PL) measurements are reported for Si/Si1-xGex nanostructures grown by molecular beam epitaxy under near Stranski-Krastanov (S-K) growth mode conditions. In samples with x ranging from 0.096 to 0.53, we observe that an increase in the Raman signal related to Ge-Ge vibrations correlates with (i) a red shift in the PL peak position, (ii) an increase in the activation energy of PL thermal quenching, and (iii) an increase in the PL quantum efficiency. The results indicate that for x>0.5 Ge atoms form nanometer size clusters with a nearly pure Ge core surrounded by a SiGe shell. Time-resolved PL measurements reveal a stretched-exponential long-lived PL component that is associated with compositional and dimensional fluctuations in the SiGe dots.

Original languageEnglish (US)
Pages (from-to)174-179
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-4
StatePublished - Feb 2005
EventInternational Conference on Quantum Dots - Banff, Alberta, Canada
Duration: May 10 2004May 13 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


  • Dots
  • Nanocrystals
  • Photoluminescence
  • Raman scattering
  • SiGe


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