TY - GEN
T1 - Optically assisted metal-induced crystallization of thin Si films for low-cost solar cells
AU - Chen, Wei
AU - Sopori, Bhushan
AU - Jones, Kim
AU - Reedy, Robert
AU - Ravindra, N. M.
AU - Aparacio, Roger
AU - Birkmire, Robert
AU - Morrison, Scott
AU - Coats, Ken
AU - Madan, Arun
PY - 2001
Y1 - 2001
N2 - Optically assisted, metal induced crystallization (MIC) was used to convert amorphous Si films, deposited on Al coated glass substrates, into polycrystalline Si (pc-Si). The study investigated the effects of deposition temperature, process temperature, and film thickness on the grain orientation, grain size, and crystallization front of the processed films. Furthermore, we have attempted to examine the role of Al in MIC - in particular, whether the metal can be confined to the interface while grain enhancement occurs.
AB - Optically assisted, metal induced crystallization (MIC) was used to convert amorphous Si films, deposited on Al coated glass substrates, into polycrystalline Si (pc-Si). The study investigated the effects of deposition temperature, process temperature, and film thickness on the grain orientation, grain size, and crystallization front of the processed films. Furthermore, we have attempted to examine the role of Al in MIC - in particular, whether the metal can be confined to the interface while grain enhancement occurs.
UR - http://www.scopus.com/inward/record.url?scp=1842692251&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1842692251&partnerID=8YFLogxK
U2 - 10.1557/proc-685-d3.2.1
DO - 10.1557/proc-685-d3.2.1
M3 - Conference contribution
AN - SCOPUS:1842692251
SN - 1558996214
SN - 9781558996212
T3 - Materials Research Society Symposium Proceedings
SP - 41
EP - 46
BT - Advanced Materials and Devices for Large-Area Electronics
PB - Materials Research Society
T2 - 2001 MRS Spring Meeting
Y2 - 16 April 2001 through 20 April 2001
ER -