Ordering and self-organized growth of Si in the Si/SiO2 superlattice system

David J. Lockwood, G. F. Grom, P. M. Fauchet, L. Tsybeskov

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have observed self-organization in Si nanocrystals fabricated by high temperature annealing of nanometer-thick layers of amorphous Si confined between thin SiO2 layers. Silicon nanoparticles larger than ∼ 8 nm spontaneously form brick-shaped crystallites oriented along the [1 1 1] direction while smaller nanocrystals adopt a more spherical geometry. The observed ordering and self-organization are important steps towards reproducible maskless Si nanofabrication and the consequent construction of Si/SiO2 quantum devices.

Original languageEnglish (US)
Pages (from-to)1898-1903
Number of pages6
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4
DOIs
StatePublished - Apr 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A1. Crystal morphology
  • A1. Nanostructures
  • A1. Recrystallization A3. Superlattices
  • B2. Semiconducting silicon

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