Organic-Inorganic Heterointerfaces for Ultrasensitive Detection of Ultraviolet Light

Dali Shao, Jian Gao, Philippe Chow, Hongtao Sun, Guoqing Xin, Prachi Sharma, Jie Lian, Nikhil A. Koratkar, Shayla Sawyer

Research output: Contribution to journalArticlepeer-review

115 Scopus citations


The performance of graphene field-effect transistors is limited by the drastically reduced carrier mobility of graphene on silicon dioxide (SiO2) substrates. Here we demonstrate an ultrasensitive ultraviolet (UV) phototransistor featuring an organic self-assembled monolayer (SAM) sandwiched between an inorganic ZnO quantum dots decorated graphene channel and a conventional SiO2/Si substrate. Remarkably, the room-temperature mobility of the chemical-vapor-deposition grown graphene channel on the SAM is an order-of-magnitude higher than on SiO2, thereby drastically reducing electron transit-time in the channel. The resulting recirculation of electrons (in the graphene channel) within the lifetime of the photogenerated holes (in the ZnO) increases the photoresponsivity and gain of the transistor to ∼108 A/W and ∼3 × 109, respectively with a UV to visible rejection ratio of ∼103. Our UV photodetector device manufacturing is also compatible with current semiconductor processing, and suitable for large volume production. (Figure Presented).

Original languageEnglish (US)
Pages (from-to)3787-3792
Number of pages6
JournalNano Letters
Issue number6
StatePublished - Jun 10 2015
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


  • Ultraviolet photodetector
  • ZnO quantum dots
  • gain
  • graphene
  • heterointerface


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