Oxide structure-dependent interfacial layer defects of HfAlO/SiO 2 /Si stack analyzed by conductance method

Yi Ming Ding, Durgamadhab Misra

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12 Scopus citations


This work investigates the interface properties in a metal oxide semiconductor capacitor device with a 3 nm HfAlO/0.5 nm SiO 2 /Si stacks prepared by various processing conditions. Different Al doping, different postannealing temperatures, and different deposition steps and stacks were considered. Equivalent oxide thickness and flat band voltage (V FB ) were obtained from capacitance-voltage measurements. After the measurement, a simple approach was used to correct the error introduced by the series resistance R s associated with the substrate and contact while carefully monitoring the impact of the tunneling current. The interface state density (D it ) was calculated by the conductance method, and it was observed that the D it is dependent on the structure of hafnium aluminum oxide film. The amorphous structure has the lowest D it (2.76 × 10 11 eV -1 cm -2 ) whereas tetragonal HfO 2 has the highest D it (1.27 × 10 12 eV -1 cm -2 ). The D it values of other structures are within the range of observed highest and lowest values.

Original languageEnglish (US)
Article number021203
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number2
StatePublished - Mar 1 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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