Oxide structure-dependent interfacial layer defects of HfAlO/SiO₂/Si stack analyzed by conductance method

Keyphrases

• Silica 100%
• Interfacial Layer 100%
• Oxide Structure 100%
• Conductance Method 100%
• HfAlO 100%
• Structure-dependent 100%
• Low Density 50%
• Interface Properties 50%
• High Density 50%
• HfO2 50%
• Processing Conditions 50%
• Tetragonal 50%
• Series Resistance 50%
• Tunneling Current 50%
• Interface State Density 50%
• Amorphous Structure 50%
• Flat-band Voltage 50%
• Capacitance-voltage Measurements 50%
• Equivalent Oxide Thickness 50%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 50%
• Aluminum Oxide Film 50%
• Hafnium Aluminum Oxide 50%
• Density Value 50%
• Al Doping 50%
• Post-annealing 50%

Engineering

• Defects 100%
• Simple Approach 100%
• Tunnel Construction 100%
• Series Resistance 100%
• Interfacial Layer 100%
• Oxide Film 100%
• Interface State 100%
• Processing Condition 100%
• Metal Oxide Semiconductor 100%
• Aluminum Oxide 100%
• Oxide Thickness 100%

Material Science

• Density 100%
• Oxide Compound 100%
• Capacitance 20%
• Interface Property 20%
• Capacitor 20%
• Metal Oxide 20%
• Aluminum Oxide 20%
• Oxide Film 20%
• Amorphous Material 20%
• Oxide Semiconductor 20%
• Hafnium 20%