@inproceedings{4c4aed67e10f404bb9b4fad287fbd4eb,
title = "Oxide structure-dependent interfacial layer defects of HfAlO/SiO2/Si stack analyzed by conductance method",
abstract = "This work investigates the interface properties in a metal oxide semiconductor capacitor (MOS-C) device with a 3 nm HfAlO/0.5 nm SiO2/Si stacks prepared by various processing conditions. The impact of different Al doping, different post annealing temperatures and different deposition steps and stacks was studied. Equivalent oxide thickness (EOT) and flat band voltage (VFB) were obtained from capacitance-voltage measurements. A simple approach was used to address the error introduced by the series resistance(Rs)associated with the substrate and contact while carefully monitoring the impact of the tunneling current. The interface state density (Dit) was calculated by the conductance method. The observed Dit seems to be dependent on the structure of hafnium aluminum oxide film. The amorphous structure has the lowest Dit tetragonal HfO2 (t-HfO2) has the highest Dit and the Dit values of other structures are within the highest and lowest values.",
author = "Ding, {Yi Ming} and Durgamadhab Misra",
year = "2015",
month = jan,
day = "1",
doi = "10.1149/06604.0245ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "245--262",
editor = "F. Roozeboom and V. Narayanan and K. Kakushima and Timans, {P. J.} and Gusev, {E. P.} and Z. Karim and S. DeGendt",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5",
edition = "4",
note = "Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
}