Oxide structure-dependent interfacial layer defects of HfAlO/SiO2/Si stack analyzed by conductance method

Yi Ming Ding, Durgamadhab Misra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work investigates the interface properties in a metal oxide semiconductor capacitor (MOS-C) device with a 3 nm HfAlO/0.5 nm SiO2/Si stacks prepared by various processing conditions. The impact of different Al doping, different post annealing temperatures and different deposition steps and stacks was studied. Equivalent oxide thickness (EOT) and flat band voltage (VFB) were obtained from capacitance-voltage measurements. A simple approach was used to address the error introduced by the series resistance(Rs)associated with the substrate and contact while carefully monitoring the impact of the tunneling current. The interface state density (Dit) was calculated by the conductance method. The observed Dit seems to be dependent on the structure of hafnium aluminum oxide film. The amorphous structure has the lowest Dit tetragonal HfO2 (t-HfO2) has the highest Dit and the Dit values of other structures are within the highest and lowest values.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
EditorsF. Roozeboom, V. Narayanan, K. Kakushima, P. J. Timans, E. P. Gusev, Z. Karim, S. DeGendt
PublisherElectrochemical Society Inc.
Pages245-262
Number of pages18
Edition4
ISBN (Electronic)9781607685395
DOIs
StatePublished - Jan 1 2015
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
Duration: May 24 2015May 28 2015

Publication series

NameECS Transactions
Number4
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period5/24/155/28/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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