Keyphrases
Silica
100%
Interfacial Layer
100%
Oxide Structure
100%
Conductance Method
100%
HfAlO
100%
Structure-dependent
100%
Low Density
50%
Interface Properties
50%
High Density
50%
HfO2
50%
Processing Conditions
50%
Tetragonal
50%
Series Resistance
50%
Tunneling Current
50%
Interface State Density
50%
Amorphous Structure
50%
Flat-band Voltage
50%
Capacitance-voltage Measurements
50%
Equivalent Oxide Thickness
50%
Metal-oxide-semiconductor Capacitor (MOSCAP)
50%
Aluminum Oxide Film
50%
Hafnium Aluminum Oxide
50%
Density Value
50%
Al Doping
50%
Post-annealing Temperature
50%
Engineering
Defects
100%
Simple Approach
100%
Tunnel Construction
100%
Annealing Temperature
100%
Series Resistance
100%
Interfacial Layer
100%
Oxide Film
100%
Interface State
100%
Processing Condition
100%
Metal Oxide Semiconductor
100%
Aluminum Oxide
100%
Oxide Thickness
100%
Material Science
Density
100%
Oxide Compound
100%
Capacitance
20%
Interface Property
20%
Capacitor
20%
Metal Oxide
20%
Annealing
20%
Aluminum Oxide
20%
Oxide Film
20%
Amorphous Material
20%
Oxide Semiconductor
20%
Hafnium
20%
Chemical Engineering
Voltage Measurement
100%
Oxide Semiconductors
100%
Hafnium
100%