Oxide thin films for tunable microwave devices

X. X. Xi, Hong Cheng Li, Weidong Si, A. A. Sirenko, I. A. Akimov, J. R. Fox, A. M. Clark, Jianhua Hao

Research output: Contribution to journalConference articlepeer-review

110 Scopus citations

Abstract

Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.

Original languageEnglish (US)
Pages (from-to)393-405
Number of pages13
JournalJournal of Electroceramics
Volume4
Issue number2
DOIs
StatePublished - 2000
Externally publishedYes
Event5th International Workshop on Oxide Electronics - Maryland, MD, USA
Duration: Dec 7 1998Dec 8 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering
  • Materials Chemistry

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