Oxygen vacancy defect engineering using atomic layer deposited HfAlO_x in multi-layered gate stack

Keyphrases

• Activation Energy 100%
• Al Incorporation 50%
• Atomic Layer Deposited 100%
• Conduction Band 50%
• Coordination number 50%
• Current-voltage Measurements 50%
• Defect Activation 100%
• Defect Engineering 100%
• Defect Levels 50%
• Dielectric 50%
• Engineering Model 50%
• Flat-band Voltage 50%
• Gate Injection 50%
• Gate Stack 100%
• Generation Process 50%
• Hf Incorporation 50%
• HfAlOx 100%
• HfO2 100%
• High Temperature 50%
• High-k Dielectric 50%
• Injection Mode 50%
• Leakage Current Behavior 50%
• Oxygen Vacancy 50%
• Oxygen Vacancy Defects 100%
• Stress Induced Leakage Current 50%
• Trap Generation 50%
• V-type 100%
• Valence Electrons 50%

Engineering

• Activation Energy 22%
• Atomic Layer 100%
• Conduction Band 11%
• Defects 100%
• Dielectrics 22%
• Engineering 100%
• Engineering Model 11%
• Gate Stack 100%
• Oxygen Vacancy 100%
• Stress Induced Leakage Current 11%

Material Science

• Activation Energy 100%
• Dielectric Material 100%
• Oxygen Vacancy 100%
• Vacancy Defect 100%