P-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells

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Abstract

Experimental evidence shows that non-shallow acceptor states defect complex VCd-ClTe|0/- and Cu substitution of Cd CuCd|0/- play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells. In this work, two equations are presented by using graphic method, one to determine the limit of p-doping or hole density for such non-shallow acceptor levels, and another to show the quantitative relationship of n-type donor compensation of p-type acceptors in such a material.

Original languageEnglish (US)
Pages (from-to)1627-1629
Number of pages3
JournalSolar Energy Materials and Solar Cells
Volume94
Issue number10
DOIs
StatePublished - Oct 1 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

Keywords

  • Acceptor
  • Activation energy
  • CdTe
  • Hole density
  • Non-shallow
  • P-Doping

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