Abstract
Experimental evidence shows that non-shallow acceptor states defect complex VCd-ClTe|0/- and Cu substitution of Cd CuCd|0/- play critical roles in p-doping of CdTe in CdS/CdTe thin film solar cells. In this work, two equations are presented by using graphic method, one to determine the limit of p-doping or hole density for such non-shallow acceptor levels, and another to show the quantitative relationship of n-type donor compensation of p-type acceptors in such a material.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1627-1629 |
| Number of pages | 3 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 94 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 2010 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
Keywords
- Acceptor
- Activation energy
- CdTe
- Hole density
- Non-shallow
- P-Doping