P-i-n heterojunction solar cells with a colloidal quantum-dot absorber layer

Dong Kyun Ko; Patrick R. Brown; Moungi G. Bawendi; Vladimir Bulovic̈

doi:10.1002/adma.201401250

P-i-n heterojunction solar cells with a colloidal quantum-dot absorber layer

Dong Kyun Ko, Patrick R. Brown, Moungi G. Bawendi, Vladimir Bulovic̈

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.

Original language	English (US)
Pages (from-to)	4845-4850
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	28
DOIs	https://doi.org/10.1002/adma.201401250
State	Published - Jul 23 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

depletion region
lead selenide
p-i-n heterojunctions
quantum dot solar cells

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10.1002/adma.201401250

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@article{d24dda1cba1b4311a1fd52715f73ba7e,

title = "P-i-n heterojunction solar cells with a colloidal quantum-dot absorber layer",

abstract = "A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.",

keywords = "depletion region, lead selenide, p-i-n heterojunctions, quantum dot solar cells",

author = "Ko, {Dong Kyun} and Brown, {Patrick R.} and Bawendi, {Moungi G.} and Vladimir Bulovi{\"c}",

year = "2014",

month = jul,

day = "23",

doi = "10.1002/adma.201401250",

language = "English (US)",

volume = "26",

pages = "4845--4850",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "28",

}

TY - JOUR

T1 - P-i-n heterojunction solar cells with a colloidal quantum-dot absorber layer

AU - Ko, Dong Kyun

AU - Brown, Patrick R.

AU - Bawendi, Moungi G.

AU - Bulovic̈, Vladimir

PY - 2014/7/23

Y1 - 2014/7/23

N2 - A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.

AB - A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.

KW - depletion region

KW - lead selenide

KW - p-i-n heterojunctions

KW - quantum dot solar cells

UR - http://www.scopus.com/inward/record.url?scp=84904578876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904578876&partnerID=8YFLogxK

U2 - 10.1002/adma.201401250

DO - 10.1002/adma.201401250

M3 - Article

AN - SCOPUS:84904578876

SN - 0935-9648

VL - 26

SP - 4845

EP - 4850

JO - Advanced Materials

JF - Advanced Materials

IS - 28

ER -

P-i-n heterojunction solar cells with a colloidal quantum-dot absorber layer

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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