P-i-n heterojunction solar cells with a colloidal quantum-dot absorber layer

Dong Kyun Ko, Patrick R. Brown, Moungi G. Bawendi, Vladimir Bulovic̈

Research output: Contribution to journalArticlepeer-review

69 Scopus citations


A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.

Original languageEnglish (US)
Pages (from-to)4845-4850
Number of pages6
JournalAdvanced Materials
Issue number28
StatePublished - Jul 23 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


  • depletion region
  • lead selenide
  • p-i-n heterojunctions
  • quantum dot solar cells


Dive into the research topics of 'P-i-n heterojunction solar cells with a colloidal quantum-dot absorber layer'. Together they form a unique fingerprint.

Cite this