P-Silicon based microbolometer

Asahel Banobre, N. M. Ravindra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the use of p-Type low doped silicon as a thermosensing element for application in the fabrication of uncooled infrared microbolometers has been investigated. A simulation of the radiative properties of a multilayer structure, in the infrared spectral range of 2.5-14 microns, utilizing Multi-Rad-software based on a matrix method of representing the optical properties, at room temperature, is presented. The results are in accord with the available experimental data in the literature. Black gold (bAu) has been considered as an IR absorber layer and low doped psilicon as a thermosensing layer. The simulated results of the radiative properties and numerical calculations show that p-silicon is an excellent candidate for thermosensing applications due to its compatible optical and electrical characteristics.

Original languageEnglish (US)
Title of host publicationMaterials Science and Technology Conference and Exhibition 2016, MS and T 2016
PublisherAssociation for Iron and Steel Technology, AISTECH
Pages1121-1132
Number of pages12
ISBN (Electronic)9781510833142
StatePublished - Jan 1 2016
EventMaterials Science and Technology Conference and Exhibition 2016, MS and T 2016 - Salt Lake City, United States
Duration: Oct 23 2016Oct 27 2016

Publication series

NameMaterials Science and Technology Conference and Exhibition 2016, MS and T 2016
Volume2

Other

OtherMaterials Science and Technology Conference and Exhibition 2016, MS and T 2016
Country/TerritoryUnited States
CitySalt Lake City
Period10/23/1610/27/16

All Science Journal Classification (ASJC) codes

  • Materials Science (miscellaneous)
  • Mechanics of Materials
  • Energy Engineering and Power Technology

Keywords

  • Black gold
  • Optical properties
  • P-Si
  • Thermosensing
  • Uncooled microbolometer

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