P-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Q. Wang; X. Liu; M. G. Kibria; S. Zhao; H. P.T. Nguyen; K. H. Li; Z. Mi; T. Gonzalez; M. P. Andrews

doi:10.1039/c4nr01608d

P-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Q. Wang, X. Liu, M. G. Kibria, S. Zhao, H. P.T. Nguyen, K. H. Li, Z. Mi, T. Gonzalez, M. P. Andrews

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Micro-Raman scattering and X-ray photoelectron spectroscopy were employed to investigate Mg-doped GaN nanowires. With the increase of Mg doping level, pronounced Mg-induced local vibrational modes were observed. The evolution of longitudinal optical phonon-plasmon coupled mode, together with detailed X-ray photoelectron spectroscopy studies, show that the near-surface region of nanowires can be transformed from weakly n-type to p-type with the increase of Mg doping.

Original language	English (US)
Pages (from-to)	9970-9976
Number of pages	7
Journal	Nanoscale
Volume	6
Issue number	17
DOIs	https://doi.org/10.1039/c4nr01608d
State	Published - Sep 7 2014
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1039/c4nr01608d

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title = "P-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy",

abstract = "Micro-Raman scattering and X-ray photoelectron spectroscopy were employed to investigate Mg-doped GaN nanowires. With the increase of Mg doping level, pronounced Mg-induced local vibrational modes were observed. The evolution of longitudinal optical phonon-plasmon coupled mode, together with detailed X-ray photoelectron spectroscopy studies, show that the near-surface region of nanowires can be transformed from weakly n-type to p-type with the increase of Mg doping.",

author = "Q. Wang and X. Liu and Kibria, {M. G.} and S. Zhao and Nguyen, {H. P.T.} and Li, {K. H.} and Z. Mi and T. Gonzalez and Andrews, {M. P.}",

year = "2014",

month = sep,

day = "7",

doi = "10.1039/c4nr01608d",

language = "English (US)",

volume = "6",

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journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

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T1 - P-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

AU - Wang, Q.

AU - Liu, X.

AU - Kibria, M. G.

AU - Zhao, S.

AU - Nguyen, H. P.T.

AU - Li, K. H.

AU - Mi, Z.

AU - Gonzalez, T.

AU - Andrews, M. P.

PY - 2014/9/7

Y1 - 2014/9/7

N2 - Micro-Raman scattering and X-ray photoelectron spectroscopy were employed to investigate Mg-doped GaN nanowires. With the increase of Mg doping level, pronounced Mg-induced local vibrational modes were observed. The evolution of longitudinal optical phonon-plasmon coupled mode, together with detailed X-ray photoelectron spectroscopy studies, show that the near-surface region of nanowires can be transformed from weakly n-type to p-type with the increase of Mg doping.

AB - Micro-Raman scattering and X-ray photoelectron spectroscopy were employed to investigate Mg-doped GaN nanowires. With the increase of Mg doping level, pronounced Mg-induced local vibrational modes were observed. The evolution of longitudinal optical phonon-plasmon coupled mode, together with detailed X-ray photoelectron spectroscopy studies, show that the near-surface region of nanowires can be transformed from weakly n-type to p-type with the increase of Mg doping.

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DO - 10.1039/c4nr01608d

M3 - Article

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SN - 2040-3364

VL - 6

SP - 9970

EP - 9976

JO - Nanoscale

JF - Nanoscale

IS - 17

ER -

P-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

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