P-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy

Q. Wang, X. Liu, M. G. Kibria, S. Zhao, H. P.T. Nguyen, K. H. Li, Z. Mi, T. Gonzalez, M. P. Andrews

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Micro-Raman scattering and X-ray photoelectron spectroscopy were employed to investigate Mg-doped GaN nanowires. With the increase of Mg doping level, pronounced Mg-induced local vibrational modes were observed. The evolution of longitudinal optical phonon-plasmon coupled mode, together with detailed X-ray photoelectron spectroscopy studies, show that the near-surface region of nanowires can be transformed from weakly n-type to p-type with the increase of Mg doping.

Original languageEnglish (US)
Pages (from-to)9970-9976
Number of pages7
JournalNanoscale
Volume6
Issue number17
DOIs
StatePublished - Sep 7 2014
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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