P-type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111)

H. P.T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, Z. Mi

Research output: Contribution to journalArticlepeer-review

251 Scopus citations

Abstract

Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were monolithically grown on Si(111) by molecular beam epitaxy, with the emission characteristics controlled by the dot properties in a single epitaxial growth step. With the use of p-type modulation doping in the dot-in-a-wire heterostructures, we have demonstrated the most efficient phosphor-free white LEDs ever reported, which exhibit an internal quantum efficiency of ∼56.8%, nearly unaltered CIE chromaticity coordinates with increasing injection current, and virtually zero efficiency droop at current densities up to ∼640 A/cm2. The remarkable performance is attributed to the superior three-dimensional carrier confinement provided by the electronically coupled dot-in-a-wire heterostructures, the nearly defect- and strain-free GaN nanowires, and the significantly enhanced hole transport due to the p-type modulation doping.

Original languageEnglish (US)
Pages (from-to)1919-1924
Number of pages6
JournalNano Letters
Volume11
Issue number5
DOIs
StatePublished - May 11 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • InGaN
  • Nanowire
  • light-emitting diodes
  • molecular beam epitaxy
  • p-doping
  • quantum dot

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