Keyphrases
P-type
100%
Indium Gallium Nitride (InGaN)
100%
Modulation-doped
100%
Si(111)
100%
Dot-in-a-wire
100%
White Light-emitting Diodes
100%
Heterostructure
50%
Modulation Doping
50%
Three-dimensional (3D)
25%
Current Density
25%
Molecular Beam Epitaxy
25%
Injection Current
25%
Full-color
25%
Light-emitting Diodes
25%
Epitaxial Growth
25%
Emission Characteristics
25%
Efficiency Droop
25%
Internal Quantum Efficiency
25%
GaN Nanowires
25%
Hole Transport
25%
Carrier Confinement
25%
Catalyst-free
25%
Phosphorus-free
25%
CIE Chromaticity Coordinates
25%
Strain-free
25%
Growth Steps
25%
Engineering
Light-Emitting Diode
100%
Heterostructures
66%
Defects
33%
Nanowires
33%
Current Injection
33%
Efficiency Droop
33%
Internal Quantum Efficiency
33%
Chromaticity Coordinate
33%
Free Strain
33%
Chemical Engineering
Nanowires
100%
Molecular Beam Epitaxy
100%
Epitaxial Growth
100%
Material Science
Light-Emitting Diode
100%
Heterojunction
66%
Density
33%
Nanowire
33%
Epitaxy
33%
Molecular Beam Epitaxy
33%
Physics
Light Emitting Diode
100%
Modulation Doping
66%
Nanowires
33%
Molecular Beam Epitaxy
33%