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Pattern placement correction methodology for 200 mm SCALPEL masks
L. E. Ocola
, R. C. Farrow
, R. J. Kasica
, C. G. Caminos
, L. Rutberg
, R. F. Fullowan
, K. Teffeau
, M. I. Blakey
, M. L. Peabody
, C. S. Knurek
, G. R. Bogart
, A. E. Novembre
, J. A. Liddle
, M. Lercel
, C. Magg
, K. Collins
, M. Trybendis
, N. Cadwell
, R. Jeffer
, W. J. Dauksher
D. J. Resnick, D. Mancini, S. I. Han, Z. Masnyj, K. Smith, P. J.S. Mangat
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peer-review
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Scopus citations
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Keyphrases
Correction Method
100%
Pattern Placement
100%
Image Position
100%
Lithography
60%
Placement Error
60%
Local Image
60%
Projection Lithography
40%
Unique Capabilities
20%
Lithography Tool
20%
Optical Components
20%
Sub-100 Nm
20%
Global Image
20%
Pattern Placement Error
20%
Mask Writer
20%