Pattern processing results and characteristics for SCALPEL masks

A. E. Novembre, M. I. Blakey, R. C. Farrow, R. J. Kasica, C. S. Knurek, J. A. Liddle, M. L. Peabody

Research output: Contribution to journalConference articlepeer-review

6 Scopus citations

Abstract

SCALPEL (SCattering with Angular Limitation in Projection Electron Beam Lithography) masks consisting of a 150 nm thick SiNx membrane layer and 25-27.5 nm and 5-6 nm thick tungsten and chromium scatterer bi-layer have been fabricated and used to investigate pattern transfer processes for the mask scatterer layer. Wet and dry (plasma) processes have been developed and investigated in terms of CD control, uniformity, linearity and line edge roughness. Introduction of a baking step after resist development was found to improve the resist and scatterer layer pattern edge quality. Wet pattern transfer processes are shown to meet CD specifications down to 0.40 μm and the dry process provided meeting CD specifications down to 0.32 μm. CD uniformity for the dry process was measured to be 15 nm 3σ.

Original languageEnglish (US)
Pages (from-to)271-274
Number of pages4
JournalMicroelectronic Engineering
Volume46
Issue number1
DOIs
StatePublished - May 1999
EventProceedings of the 1998 International Conference on Micro- and Nanofabrication (MNE98) - Leuven
Duration: Sep 22 1998Sep 24 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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