Penn‐like model calculations application to hydrogenated amorphous silicon films prepared by glow discharge

N. M. Ravindra, C. Ance, J. P. Ferraton, A. Donnadieu, S. Robin

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Recent model calculations are studied of Ance et al. concerning the valence electron density and hydrogen concentration in hydrogenated amorphous silicon films prepared by glow discharge decomposition of silane. This study is essentially necessitated by the fact that the model of Ance et al. yields values of Penn gap which are fairly large when compared to energies corresponding to peaks in the spectra of the imaginary part of the dielectric constant. Also a method is proposed to evaluate the density of the films. The densities hence determined are shown to be in accord with available experimental data. In the passing, results of the electronic polarizability of these films are also reported.

Original languageEnglish (US)
Pages (from-to)347-352
Number of pages6
Journalphysica status solidi (b)
Volume115
Issue number2
DOIs
StatePublished - Jan 1 1983
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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